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DMN2215UDM
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
IDSS
IGSS
20
?
?
?
?
?
?
1
± 10
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
0.6
?
?
80
105
1.0
100
140
V
m Ω
V DS = V CS , I D = 250 μ A
V GS = 4.5V, I D = 2.5A
V GS = 2.5V, I D = 1.5A
165
215
V GS = 1.8V, I D = 1.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y fs |
V SD
?
?
5
0.73
?
1.1
S
V
V DS =5V, I D = 2.4A
V GS = 0V, I S = 1.05A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C iss
C oss
C rss
t d(on)
t r
t d(off)
t t
?
?
?
?
?
?
?
188
44
30
8
3.8
19.6
8.3
?
?
?
?
?
?
?
pF
pF
pF
ns
V DS = 10V, V GS = 0V
f = 1.0MHz
V DD = 10V, R L = 10 Ω
I D = 1A, V GEN = 4.5V, R G = 6 Ω
Notes:
10
5. Short duration pulse test used to minimize self-heating effect.
8
7
8
6
6
4
5
4
3
2
2
1
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
2 of 4
www.diodes.com
June 2008
? Diodes Incorporated
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